Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

ABSTRACT

An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation of application Ser. No.09/717,717, filed Nov. 21, 2000 (now U.S. Patent ______), entitledPendeoepitaxial Methods of Fabricating Gallium Nitride SemiconductorLayers On Silicon Carbide Substrates by Lateral Growth From Sidewalls ofMasked Posts, and Gallium Nitride Semiconductor Structures FabricatedThereby, which itself is a continuation of application Ser. No.09/198,784, filed Nov. 24, 1998 (now U.S. Pat. No. 6,177,688), entitledPendeoepitaxial Gallium Nitride Semiconductor Layers on Silicon CarbideSubstrates. Both of these applications are assigned to the assignee ofthe present application, the disclosures of both of which are herebyincorporated herein by reference in their entirety as if set forth fullyherein.

FEDERALLY SPONSORED RESEARCH

[0002] This invention was made with Government support under Office ofNaval Research Contract Nos. N00014-96-1-0765, N00014-98-1-0384, andN00014-98-1-0654. The Government may have certain rights to thisinvention.

FIELD OF THE INVENTION

[0003] This invention relates to microelectronic devices and fabricationmethods, and more particularly to gallium nitride semiconductor devicesand fabrication methods therefor.

BACKGROUND OF THE INVENTION

[0004] Gallium nitride is being widely investigated for microelectronicdevices including but not limited to transistors, field emitters andoptoelectronic devices. It will be understood that, as used herein,gallium nitride also includes alloys of gallium nitride such as aluminumgallium nitride, indium gallium nitride and aluminum indium galliumnitride.

[0005] A major problem in fabricating gallium nitride-basedmicroelectronic devices is the fabrication of gallium nitridesemiconductor layers having low defect densities. It is known that onecontributor to defect density is the substrate on which the galliumnitride layer is grown. Accordingly, although gallium nitride layershave been grown on sapphire substrates, it is known to reduce defectdensity by growing gallium nitride layers on aluminum nitride bufferlayers which are themselves formed on silicon carbide substrates.Notwithstanding these advances, continued reduction in defect density isdesirable.

[0006] It is also known to fabricate gallium nitride structures throughopenings in a mask. For example, in fabricating field emitter arrays, itis known to selectively grow gallium nitride on stripe or circularpatterned substrates. See, for example, the publications by Nam et al.entitled “Selective Growth of GaN and Al _(0.2) Ga _(0.8) N onGaN/AlN/6H-SiC(0001) Multilayer Substrates Via Organometallic VaporPhase Epitaxy”, Proceedings of the Materials Research Society, December1996, and “Growth of GaN and Al ₀ ₂ Ga ₀ ₈ N on Patterened Substratesvia Organometallic Vapor Phase Epitaxy”, Japanese Journal of AppliedPhysics., Vol. 36, Part 2, No. 5A, May 1997, pp. L532-L535. As disclosedin these publications, undesired ridge growth or lateral overgrowth mayoccur under certain conditions.

SUMMARY OF THE INVENTION

[0007] It is therefore an object of the present invention to provideimproved methods of fabricating gallium nitride semiconductor layers,and improved gallium nitride layers so fabricated.

[0008] It is another object of the invention to provide methods offabricating gallium nitride semiconductor layers that can have lowdefect densities, and gallium nitride semiconductor layers sofabricated.

[0009] These and other objects are provided, according to the presentinvention, by masking an underlying gallium nitride layer on a siliconcarbide substrate with a mask that includes an array of openings thereinand etching the underlying gallium nitride layer through the array ofopenings to define a plurality of posts in the underlying galliumnitride layer and a plurality of trenches therebetween. The posts eachinclude a sidewall and a top having the mask thereon. The sidewalls ofthe posts are laterally grown into the trenches to thereby form agallium nitride semiconductor layer. During this lateral growth, themask prevents nucleation and vertical growth from the tops of the posts.Accordingly, growth proceeds laterally into the trenches, suspended fromthe sidewalls of the posts. This form of growth is referred to herein aspendeoepitaxy from the Latin “to hang” or “to be suspended”.Microelectronic devices may be formed in the gallium nitridesemiconductor layer.

[0010] According to another aspect of the invention, the sidewalls ofthe posts are laterally grown into the trenches until the laterallygrown sidewalls coalesce in the trenches to thereby form a galliumnitride semiconductor layer. The lateral growth from the sidewalls ofthe posts may be continued so that the gallium nitride layer growsvertically through the openings in the mask and laterally overgrows ontothe mask on the tops of the posts, to thereby form a gallium nitridesemiconductor layer. The lateral overgrowth can be continued until thegrown sidewalls coalesce on the mask to thereby form a continuousgallium nitride semiconductor layer. Microelectronic devices may beformed in the continuous gallium nitride semiconductor layer.

[0011] It has been found, according to the present invention, thatdislocation defects do not significantly propagate laterally from thesidewalls of the posts, so that the laterally grown sidewalls of theposts are relatively defect-free. Moreover, during growth, it has beenfound that significant vertical growth on the top of the posts isprevented by the mask so that relatively defect-free lateral growthoccurs from the sidewalls onto the mask. Significant nucleation on thetop of the posts also preferably is prevented. The overgrown galliumnitride semiconductor layer is therefore relatively defect-free.

[0012] Accordingly, the mask functions as a capping layer on the poststhat forces the selective homoepitaxial growth of gallium nitride tooccur only on the sidewalls. Defects associated with heteroepitaxialgrowth of the gallium nitride seed layer are pinned under the mask. Byusing a combination of growth from sidewalls and lateral overgrowth, acomplete coalesced layer of relatively defect-free gallium nitride maybe fabricated over the entire surface of a wafer in one regrowth step.

[0013] The pendeoepitaxial gallium nitride semiconductor layer may belaterally grown using metalorganic vapor phase epitaxy (MOVPE). Forexample, the lateral gallium nitride layer may be laterally grown usingtriethylgallium (TEG) and ammonia (NH₃) precursors at about 1000-1100°C. and about 45 Torr. Preferably, TEG at about 13-39 μmol/min and NH₃ atabout 1500 sccm are used in combination with about 3000 sccm H₂ diluent.Most preferably, TEG at about 26 μmol/min, NH₃ at about 1500 sccm and H₂at about 3000 sccm at a temperature of about 1100° C. and about 45 Torrare used. The underlying gallium nitride layer preferably is formed on asubstrate such as 6H-SiC(0001), which itself includes a buffer layersuch as aluminum nitride thereon. Other buffer layers such as galliumnitride may be used. Multiple substrate layers and buffer layers alsomay be used.

[0014] The underlying gallium nitride layer including the sidewall maybe formed by forming trenches in the underlying gallium nitride layer,such that the trenches define the sidewalls. Alternatively, thesidewalls may be formed by forming masked posts on the underlyinggallium nitride layer, the masked posts including the sidewalls anddefining the trenches. A series of alternating trenches and masked postsis preferably formed to form a plurality of sidewalls. The posts areformed such that the top surface and not the sidewalls are masked. Asdescribed above, trenches and/or posts may be formed by masking andselective etching. Alternatively, selective epitaxial growth,combinations of etching and growth, or other techniques may be used. Themask may be formed on the post tops after formation of the posts. Thetrenches may extend into the buffer layer and/or into the substrate sothat the trench floors are in the buffer layer and preferably are in thesilicon carbide substrate.

[0015] The sidewalls of the posts in the underlying gallium nitridelayer are laterally grown into the trenches, to thereby form a lateralgallium nitride layer of lower defect density than that of theunderlying gallium nitride layer. Some vertical growth may also occur inthe trenches, although vertical growth from the post tops is reduced andpreferably suppressed by the mask thereon. The laterally grown galliumnitride layer is vertically grown through the openings in the mask whilepropagating the lower defect density. As the height of the verticalgrowth extends through the openings in the mask, lateral growth over themask occurs while propagating the lower defect density to thereby forman overgrown lateral gallium nitride layer on the mask.

[0016] Gallium nitride semiconductor structures according to theinvention comprise a silicon carbide substrate and a plurality ofgallium nitride posts on the silicon carbide substrate. The posts eachinclude a sidewall and a top and define a plurality of trenchestherebetween. A capping layer is provided on the tops of the posts. Alateral gallium nitride layer extends laterally from the sidewalls ofthe posts into the trenches. The lateral gallium nitride layer may alsobe referred to as a pendeoepitaxial gallium nitride layer. The lateralgallium nitride layer may be a continuous lateral gallium nitride layerthat extends between adjacent sidewalls across the trenchestherebetween.

[0017] The lateral gallium nitride layer may also extend verticallythrough the array of openings. An overgrown lateral gallium nitridelayer may also be provided that extends laterally onto the cappinglayer. The overgrown lateral gallium nitride layer may be a continuousovergrown lateral gallium nitride layer that extends between theadjacent sidewalls across the capping layer therebetween.

[0018] A plurality of microelectronic devices may be provided in thelateral gallium nitride layer and/or in the overgrown lateral galliumnitride layer. A buffer layer may be included between the siliconcarbide substrate and the plurality of posts. The trenches may extendinto the silicon carbide substrate, into the buffer layer or through thebuffer layer and into the silicon carbide substrate. The gallium nitrideposts may be of a defect density, and the lateral gallium nitride layerand the overgrown lateral gallium nitride layer are of lower defectdensity than the defect density. Accordingly, low defect density galliumnitride semiconductor layers may be produced, to thereby allow theproduction of high performance microelectronic devices.

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] FIGS. 1-6 are cross-sectional views of gallium nitridesemiconductor structures during intermediate fabrication steps accordingto the present invention.

[0020]FIGS. 7 and 8 are cross-sectional views of other embodiments ofgallium nitride semiconductor structures according to the presentinvention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0021] The present invention now will be described more fullyhereinafter with reference to the accompanying drawings, in whichpreferred embodiments of the invention are shown. This invention may,however, be embodied in many different forms and should not be construedas limited to the embodiments set forth herein; rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the invention to thoseskilled in the art. In the drawings, the thickness of layers and regionsare exaggerated for clarity. Like numbers refer to like elementsthroughout. It will be understood that when an element such as a layer,region or substrate is referred to as being “on” or “onto” anotherelement, it can be directly on the other element or intervening elementsmay also be present. Moreover, each embodiment described and illustratedherein includes its complementary conductivity type embodiment as well.

[0022] Referring now to FIGS. 1-6, methods of fabricating galliumnitride semiconductor structures according to the present invention willnow be described. As shown in FIG. 1, an underlying gallium nitridelayer 104 is grown on a substrate 102. The substrate 102 may include a6H-SiC(0001) substrate 102 a and an aluminum nitride or other bufferlayer 102 b. The crystallographic designation conventions used hereinare well known to those having skill in the art, and need not bedescribed further. The underlying gallium nitride layer 104 may bebetween 0.5 and 2.0 μm thick, and may be grown at 1000° C. on a hightemperature (1100° C.) aluminum nitride buffer layer 102 b that wasdeposited on the 6H-SiC substrate 102 a in a cold wall vertical andinductively heated metalorganic vapor phase epitaxy system usingtriethylgallium at 26 μmol/min, ammonia at 1500 seem and 3000 seemhydrogen diluent. Additional details of this growth technique may befound in a publication by T.W. Weeks et al. entitled “GaN Thin FilmsDeposited Via Organometallic Vapor Phase Epitaxy on (6H)-SiC(0001) UsingHigh-Temperature Monocrystalline AlN Buffer Layers”, Applied PhysicsLetters, Vol. 67, No. 3, Jul. 17, 1995, pp. 401-403, the disclosure ofwhich is hereby incorporated herein by reference. Other silicon carbidesubstrates, with or without buffer layers, may be used.

[0023] Continuing with the description of FIG. 1, a mask such as asilicon nitride (SiN) mask 109 is included on the underlying galliumnitride layer 104. The mask 109 may have a thickness of about 1000 Å andmay be formed on the underlying gallium nitride layer 104 using lowpressure chemical vapor deposition (CVD) at 410° C. The mask 109 ispatterned to provide an array of openings therein, using conventionalphotolithography techniques.

[0024] As shown in FIG. 1, the underlying gallium nitride layer isetched through the array of openings to define a plurality of posts 106in the underlying gallium nitride layer 104 and a plurality of trenches107 therebetween. The posts each include a sidewall 105 and a top havingthe mask 109 thereon. It will also be understood that although the posts106 and trenches 107 are preferably formed by masking and etching asdescribed above, the posts may also be formed by selectively growing theposts from an underlying gallium nitride layer and then forming acapping layer on the tops of the posts. Combinations of selective growthand selective etching may also be used.

[0025] Still referring to FIG. 1, the underlying gallium nitride layer104 includes a plurality of sidewalls 105 therein. It will be understoodby those having skill in the art that the sidewalls 105 may be thoughtof as being defined by the plurality of spaced apart posts 106, thatalso may be referred to as “mesas”, “pedestals” or “columns”. Thesidewalls 105 may also be thought of as being defined by the pluralityof trenches 107, also referred to as “wells”, in the underlying galliumnitride layer 104. The sidewalls 105 may also be thought of as beingdefined by a series of alternating trenches 107 and posts 106. Asdescribed above, the posts 106 and the trenches 107 that define thesidewalls 105 may be fabricated by selective etching and/or selectiveepitaxial growth and/or other conventional techniques. Moreover, it willalso be understood that the sidewalls need not be orthogonal to thesubstrate 102, but rather may be oblique thereto.

[0026] It will also be understood that although the sidewalls 105 areshown in cross-section in FIG. 1, the posts 106 and trenches 107 maydefine elongated regions that are straight, V-shaped or have othershapes. As shown in FIG. 1, the trenches 107 may extend into the bufferlayer 102 b and into the substrate 102 a, so that subsequent galliumnitride growth occurs preferentially on the sidewalls 105 rather than onthe trench floors. In other embodiments, the trenches may not extendinto the substrate 102 a, and also may not extend into the buffer layer102 b, depending, for example, on the trench geometry and the lateralversus vertical growth rates of the gallium nitride.

[0027] Referring now to FIG. 2, the sidewalls 105 of the underlyinggallium nitride layer 104 are laterally grown to form a lateral galliumnitride layer 108 a in the trenches 107. Lateral growth of galliumnitride may be obtained at 1000-1100° C. and 45 Torr. The precursors TEGat 13-39 μmol/min and NH₃ at 1500 sccm may be used in combination with a3000 sccm H₂ diluent. If gallium nitride alloys are formed, additionalconventional precursors of aluminum or indium, for example, may also beused. As used herein, the term “lateral” means a direction that isparallel to the faces of the substrate 102. It will also be understoodthat some vertical growth of the lateral gallium nitride 108 a may alsotake place during the lateral growth from the sidewalls 105. As usedherein, the term “vertical” denotes a directional parallel to thesidewalls 105. However, it will be understood that growth and/ornucleation on the top of the posts 106 is reduced and is preferablyeliminated by the mask 109.

[0028] Referring now to FIG. 3, continued growth of the lateral galliumnitride layer 108 a causes vertical growth of the lateral galliumnitride layer 108 a through the array of openings. Conditions forvertical growth may be maintained as was described in connection withFIG. 2. As also shown in FIG. 3, continued vertical growth into trenches107 may take place at the bottom of the trenches.

[0029] Referring now to FIG. 4, continued growth of the lateral galliumnitride layer 108 a causes lateral overgrowth onto the mask 109, to forman overgrown lateral gallium nitride layer 108 b. Growth conditions forovergrowth may be maintained as was described in connection with FIG. 2.

[0030] Referring now to FIG. 5, growth is allowed to continue until thelateral growth fronts coalesce in the trenches 107 at the interfaces 108c, to form a continuous lateral gallium nitride semiconductor layer 108a in the trenches.

[0031] Still referring to FIG. 5, growth is also allowed to continueuntil the lateral overgrowth fronts coalesce over the mask 109 at theinterfaces 108 d, to form a continuous overgrown lateral gallium nitridesemiconductor layer 108 b. The total growth time may be approximately 60minutes. A single continuous growth step may be used. As shown in FIG.6, microelectronic devices 110 may then be formed in the lateral galliumnitride semiconductor layer 108 a. Microelectronic devices also may beformed in the overgrown lateral gallium nitride layer 108 b.

[0032] Accordingly, in FIG. 6, gallium nitride semiconductor structures100 according to the present invention are illustrated. The galliumnitride structures 100 include the substrate 102. The substratepreferably includes the 6H—SiC(0001) substrate 102 a and the aluminumnitride buffer layer 102 b on the silicon carbide substrate 102 a. Thealuminum nitride buffer layer 102 b may be 0.1 μm thick.

[0033] The fabrication of the substrate 102 is well known to thosehaving skill in the art and need not be described further. Fabricationof silicon carbide substrates are described, for example, in U.S. Pat.Nos. 4,865,685 to Palmour; Re 34,861 to Davis et al.; 4,912,064 to Konget al. and 4,946,547 to Palmour et al., the disclosures of which arehereby incorporated herein by reference.

[0034] The underlying gallium nitride layer 104 is also included on thebuffer layer 102 b opposite the substrate 102 a. The underlying galliumnitride layer 104 may be between about 0.5 and 2.0 μm thick, and may beformed using metalorganic vapor phase epitaxy (MOVPE). The underlyinggallium nitride layer generally has an undesired relatively high defectdensity. For example, dislocation densities of between about 10⁸ and10¹⁰ cm⁻² may be present in the underlying gallium nitride layer. Thesehigh defect densities may result from mismatches in lattice parametersbetween the buffer layer 102 b and the underlying gallium nitride layer104, and/or other causes. These high defect densities may impact theperformance of microelectronic devices formed in the underlying galliumnitride layer 104.

[0035] Still continuing with the description of FIG. 6, the underlyinggallium nitride layer 104 includes the plurality of sidewalls 105 thatmay be defined by the plurality of posts 106 and/or the plurality oftrenches 107. As was described above, the sidewalls may be oblique andof various elongated shapes. Also as was described above, the galliumnitride posts 106 are capped with a capping layer such as a mask 109,preferably comprising silicon nitride.

[0036] Continuing with the description of FIG. 6, the lateral galliumnitride layer 108 a extends laterally and vertically from the pluralityof sidewalls 105 of the underlying gallium nitride layer 104. Theovergrown lateral gallium nitride 108 b extends from the lateral galliumnitride layer 108 a. The lateral gallium nitride layer 108 a and theovergrown lateral gallium nitride layer 108 b may be formed usingmetalorganic vapor phase epitaxy at about 1000-1100° C. and about 45Torr. Precursors of triethygallium (TEG) at about 13-39 μmol/min andammonia (NH₃) at about 1500 sccm may be used in combination with anabout 3000 sccm H₂ diluent, to form the lateral gallium nitride layer108 a and the overgrown lateral gallium nitride layer 108 b.

[0037] As shown in FIG. 6, the lateral gallium nitride layer 108 acoalesces at the interfaces 108 c to form a continuous lateral galliumnitride semiconductor layer 108 ain the trenches. It has been found thatthe dislocation densities in the underlying gallium nitride layer 104generally do not propagate laterally from the sidewalls 105 with thesame density as vertically from the underlying gallium nitride layer104. Thus, the lateral gallium nitride layer 108 a can have a relativelylow dislocation defect density, for example less than about 10⁴ cm⁻².From a practical standpoint, this may be regarded as defect-free.Accordingly, the lateral gallium nitride layer 108 a may form devicequality gallium nitride semiconductor material. Thus, as shown in FIG.6, microelectronic devices 110 may be formed in the lateral galliumnitride semiconductor layer 108 a.

[0038] Still referring to FIG. 6, the overgrown lateral gallium nitridelayer 108 b coalesces at the interfaces 108 d to form a continuousovergrown lateral gallium nitride semiconductor layer 108 b over themasks. It has been found that the dislocation densities in theunderlying gallium nitride layer 104 and of the lateral gallium nitridelayer 108 a generally do not propagate laterally with the same densityas vertically from the underlying gallium nitride layer 104 and thelateral gallium nitride layer 108 a. Thus, the overgrown lateral galliumnitride layer 108 b also can have a relatively low defect density, forexample less than about 10^(4 cm) ⁻². Accordingly, the overgrown lateralgallium nitride layer 108 b may also form device quality gallium nitridesemiconductor material. Thus, as shown in FIG. 6, microelectronicdevices 110 may also be formed in the overgrown lateral gallium nitridesemiconductor layer 108 b.

[0039] Referring now to FIGS. 7 and 8, other embodiments of galliumnitride semiconductor structures and fabrication methods according tothe present invention will now be described. Gallium nitride structuresare fabricated as was already described in connection with FIGS. 1-6using different spacings or dimensions for the posts and trenches. InFIG. 7, a small post-width/trench-width ratio is used to producediscrete gallium nitride structures. In FIG. 8, a largepost-width/trench-width ratio is used, to produce other discrete galliumnitride structures.

[0040] Referring now to FIG. 7, using a small post-width/trench-widthratio, gallium nitride semiconductor structures of FIG. 7 are fabricatedas was already described in connection with FIGS. 1-4. Still referringto FIG. 7, growth is allowed to continue until the overgrown lateralfronts coalesce over the mask 109 at the interfaces 108 d, to form acontinuous overgrown lateral gallium nitride semiconductor layer overthe mask 109. The total growth time may be approximately 60 minutes. Asshown in FIG. 7, microelectronic devices 110 may be formed in theovergrown lateral gallium nitride layer 108 b.

[0041] Referring now to FIG. 8, using a large post-width/trench-widthratio, gallium nitride semiconductor structures of FIG. 8 are fabricatedas was already described in connection with FIGS. 1-4. Still referringto FIG. 8, growth is allowed to continue until the overgrown lateralfronts coalesce in the trenches 107 at the interfaces 108 c, to form acontinuous gallium nitride semiconductor layer 108 a in the trenches107. The total growth time may be approximately 60 minutes. As shown inFIG. 8, microelectronic devices 110 may be formed in the pendeoepitaxialgallium nitride layer 108 a.

[0042] Additional discussion of methods and structures of the presentinvention will now be provided. The trenches 107 and are preferablyrectangular trenches that preferably extend along the <11{overscore(2)}0> and/or <1{overscore (1)}00> directions on the underlying galliumnitride layer 104. Truncated triangular stripes having (1{overscore(1)}01) slant facets and a narrow (0001) top facet may be obtained fortrenches along the <11{overscore (2)}0> direction. Rectangular stripeshaving a (0001) top facet, (11{overscore (2)}0) vertical side faces and(1{overscore (1)}01) slant facets may be grown along the <1{overscore(1)}00> direction. For growth times up to 3 minutes, similarmorphologies may be obtained regardless of orientation. The stripesdevelop into different shapes if the growth is continued.

[0043] The amount of lateral growth generally exhibits a strongdependence on trench orientation. The lateral growth rate of the<1{overscore (1)}00> oriented is generally much faster than those along<11{overscore (2)}0>. Accordingly, it is most preferred to orient thetrenches so that they extend along the <1{overscore (1)}00> direction ofthe underlying gallium nitride layer 104.

[0044] The different morphological development as a function oforientation appears to be related to the stability of thecrystallographic planes in the gallium nitride structure. Trenchesoriented along <11{overscore (2)}0> may have wide (1{overscore (1)}00)slant facets and either a very narrow or no (0001) top facet dependingon the growth conditions. This may be because (1{overscore (1)}01) isthe most stable plane in the gallium nitride wurtzite crystal structure,and the growth rate of this plane is lower than that of others. The{1{overscore (1)}01} planes of the <1{overscore (1)}00> orientedtrenches may be wavy, which implies the existence of more than oneMiller index. It appears that competitive growth of selected{1{overscore (1)}01} planes occurs during the deposition which causesthese planes to become unstable and which causes their growth rate toincrease relative to that of the (1{overscore (1)}01) of trenchesoriented along <11{overscore (2)}0>.

[0045] The morphologies of the gallium nitride layers selectively grownfrom trenches oriented along <1{overscore (1)}00> are also generally astrong function of the growth temperatures. Layers grown at 1000° C. maypossess a truncated triangular shape. This morphology may graduallychange to a rectangular cross-section as the growth temperature isincreased. This shape change may occur as a result of the increase inthe diffusion coefficient and therefore the flux of the gallium speciesalong the (0001) top plane onto the {1{overscore (1)}01} planes with anincrease in growth temperature. This may result in a decrease in thegrowth rate of the (0001) plane and an increase in that of the{1{overscore (1)}01}. This phenomenon has also been observed in theselective growth of gallium arsenate on silicon dioxide. Accordingly,temperatures of 1100° C. appear to be most preferred.

[0046] The morphological development of the gallium nitride regions alsoappears to depend on the flow rate of the TEG. An increase in the supplyof TEG generally increases the growth rate in both the lateral and thevertical directions. However, the lateral/vertical growth rate ratiodecrease from about 1.7 at the TEG flow rate of about 13 μmol/min to0.86 at about 39 μmol/min. This increased influence on growth rate along<0001> relative to that of <11{overscore (2)}0> with TEG flow rate maybe related to the type of reactor employed, wherein the reactant gasesflow vertically and perpendicular to the substrate. The considerableincrease in the concentration of the gallium species on the surface maysufficiently impede their diffusion to the {1{overscore (1)}01} planessuch that chemisorption and gallium nitride growth occur more readily onthe (0001) plane.

[0047] Continuous 2 μm thick gallium nitride semiconductor layers may beobtained using 7 μm wide trenches spaced 3 μm apart and oriented along<1{overscore (1)}00>, at about 1100° C. and a TEG flow rate of about 26μmol/min. Continuous 2 μm thick gallium nitride semiconductor layers mayalso be obtained using 3 μm wide trenches spaced 2 μm apart and orientedalong <1{overscore (1)}00>, also at about 1100° C. and a TEG flow rateof about 26 μmol/min. The continuous gallium nitride semiconductorlayers may include subsurface voids that form when two growth frontscoalesce. These voids may occur most often using lateral growthconditions wherein rectangular trenches and/or mask openings havingvertical {11{overscore (2)}0} side facets developed.

[0048] The continuous gallium nitride semiconductor layers may have amicroscopically flat and pit-free surface. The surfaces of the laterallygrown gallium nitride layers may include a terrace structure having anaverage step height of 0.32 nm. This terrace structure may be related tothe laterally grown gallium nitride, because it is generally notincluded in much larger area films grown only on aluminum nitride bufferlayers. The average RMS roughness values may be similar to the valuesobtained for the underlying gallium nitride layer 104.

[0049] Threading dislocations, originating from the interface betweenthe underlying gallium nitride layer 104 and the buffer layer 102 b,appear to propagate to the top surface of the underlying gallium nitridelayer 104. The dislocation density within these regions is approximately10⁹ cm⁻². By contrast, threading dislocations do not appear to readilypropagate laterally. Rather, the lateral gallium nitride layer 108 a andthe overgrown lateral gallium nitride layer 108 b contain only a fewdislocations. In the lateral gallium nitride layer 108 a, the fewdislocations may be formed parallel to the (0001) plane via theextension of the vertical threading dislocations after a 90° bend in theregrown region. These dislocations do not appear to propagate to the topsurface of the overgrown gallium nitride layer.

[0050] As described, the formation mechanism of the selectively growngallium nitride layers is lateral epitaxy. The two main stages of thismechanism are lateral (or pendeoepitaxial) growth and lateralovergrowth. During pendeoepitaxial growth, the gallium nitride growssimultaneously both vertically and laterally. The deposited galliumnitride grows selectively on the sidewalls more rapidly than it grows onthe mask 109, apparently due to the much higher sticking coefficient, s,of the gallium atoms on the gallium nitride sidewall surface (s−1)compared to on the mask (s<<1) and substrate (s<1). Ga or N atoms shouldnot readily bond to the mask and substrate surface in numbers and for atime sufficient to cause gallium nitride nuclei to form. They wouldeither evaporate or diffuse along the mask and substrate surface to theends of the mask or substrate and onto the sidewalls. During lateralovergrowth, the gallium nitride also grows simultaneously bothvertically and laterally. Once the pendeoepitaxial growth emerges overthe masks, Ga or N atoms should still not readily bond to the masksurface in numbers and for a time sufficient to cause gallium nitridenuclei to form. They would still either evaporate or diffuse along themask to the ends of the mask and onto the pendeoepitaxial galliumnitride vertical surfaces.

[0051] Surface diffusion of gallium and nitrogen on the gallium nitridemay play a role in gallium nitride selective growth. The major source ofmaterial appears to be derived from the gas phase. This may bedemonstrated by the fact that an increase in the TEG flow rate causesthe growth rate of the (0001) top facets to develop faster than the(1{overscore (1)}01) side facets and thus controls the lateral growth.

[0052] In conclusion, pendeoepitaxial and lateral epitaxial overgrowthmay be obtained from sidewalls of an underlying masked gallium nitridelayer via MOVPE. The growth may depend strongly on the sidewallorientation, growth temperature and TEG flow rate. Coalescence ofpendeoepitaxial grown and lateral overgrown gallium nitride regions toform regions with both extremely low densities of dislocations andsmooth and pit-free surfaces may be achieved through 3 μm wide trenchesbetween 2 μm wide posts and extending along the <1{overscore (1)}00>direction, at about 1100° C. and a TEG flow rate of about 26 μmol/min.The pendeoepitaxial and lateral overgrowth of gallium nitride fromsidewalls via MOVPE may be used to obtain low defect density regions formicroelectronic devices over the entire surface of the thin film.

[0053] In the drawings and specification, there have been disclosedtypical preferred embodiments of the invention and, although specificterms are employed, they are used in a generic and descriptive senseonly and not for purposes of limitation, the scope of the inventionbeing set forth in the following claims.

That which is claimed is:
 1. A gallium nitride semiconductor structure,comprising: a silicon carbide substrate; a plurality of gallium nitrideposts on the silicon carbide substrate, the posts each including asidewall and a top, and defining a plurality of trenches therebetween; acapping layer on the tops of the posts; and a lateral gallium nitridelayer that extends laterally from the sidewalls of the posts into thetrenches.
 2. A structure according to claim 1 wherein the lateralgallium nitride layer is a continuous lateral gallium nitride layer thatextends between adjacent sidewalls across the trenches therebetween. 3.A structure according to claim 1 wherein the lateral gallium nitridelayer also extends vertically in the trenches, to beyond the cappinglayer.
 4. A structure according to claim 3 further comprising: anovergrown lateral gallium nitride layer that extends laterally from thelateral gallium nitride layer onto the capping layer.
 5. A structureaccording to claim 4 wherein the overgrown lateral gallium nitride layeris a continuous overgrown lateral gallium nitride layer that extendsbetween adjacent sidewalls across the capping layer therebetween.
 6. Astructure according to claim 1 further comprising a plurality ofmicroelectronic devices in the lateral gallium nitride layer.
 7. Astructure according to claim 3 further comprising a plurality ofmicroelectronic devices in the lateral gallium nitride layer thatextends vertically in the trenches, beyond the capping layer.
 8. Astructure according to claim 4 further comprising a plurality ofmicroelectronic devices in the overgrown lateral gallium nitride layer.9. A structure according to claim 1 further comprising a buffer layerbetween the silicon carbide substrate and the plurality of posts.
 10. Astructure according to claim 1 wherein the trenches extend into thesilicon carbide substrate.
 11. A structure according to claim 9 whereinthe trenches extend through the buffer layer and into the siliconcarbide substrate.
 12. A structure according to claim 1 furthercomprising: a microelectronic device in the lateral gallium nitridelayer.
 13. A structure according to claim 1 wherein the sidewall isorthogonal to the silicon carbide substrate.
 14. A structure accordingto claim 1 wherein the sidewall is oblique to the silicon carbidesubstrate.
 15. A structure according to claim 4 further comprising abuffer layer between the silicon carbide substrate and the plurality ofposts.
 16. A structure according to claim 4 wherein the trenches extendinto the silicon carbide substrate.
 17. A structure according to claim15 wherein the trenches extend through the buffer layer and into thesilicon carbide substrate.
 18. A structure according to claim 4 furthercomprising: a microelectronic device in the overgrown lateral galliumnitride layer.
 19. A structure according to claim 4 wherein the sidewallis orthogonal to the silicon carbide substrate.
 20. A structureaccording to claim 4 wherein the sidewall is oblique to the siliconcarbide substrate.